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| Semiconductor SRA2211S PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2211S Marking RAD Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : Equivalent Circuit C(OUT) mm 1 1.90 Typ. 3 2 2.90.1 B(IN) R1 R1 = 10K 0.4 Typ. 0.45~0.60 E(COMMON) 0.2 Min. 1.12 Max. 0~0.1 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 KSR-2031-000 1 SRA2211S Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 200 150 -55 150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 10 -500 -500 -0.3 - Unit nA nA V MHz K R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-2031-000 2 |
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